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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HFM101W THRU HFM108W
SURFACE MOUNT HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram
SMX
.209 (5.31) .185 (4.70) .110 (2.79) .086 (2.18) .091 (2.31) .067 (1.70) .071 (1.80) .051 (1.30)
.010 (0.25) .008 (0.20)
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
.011 (0.28) .007 (0.18)
.180 (4.57) .160 (4.06)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
.059 (1.50) .035 (0.89)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 50oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ, TSTG 15 -65 to + 150
HFM101W HFM102W HFM103W HFM104W HFM105W HFM106W HFM107W HFM108W
UNITS Volts Volts Volts Amps Amps
50 35 50
100 70 100
200 140 200
300 210 300
400 280 400 1.0 30
600 420 600
800 560 800
1000 700 1000
12
pF
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Full Load Reverse Current, Full cycle Average TA = 55oC Maximum DC Reverse Current at @TA = 25oC Rated DC Blocking Voltage @TA = 125oC Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. 3. "Fully ROHS compliant","100% Sn plating (Pb free). SYMBOL VF IR trr 50
HFM101W HFM102W HFM103W HFM104W HFM105W HFM106W HFM107W HFM108W
UNITS Volts uAmps uAmps uAmps
1.0
1.3 50 5.0 100
1.7
75
nSec 2005-10
RATING AND CHARACTERISTIC CURVES ( HFM101W THRU HFM108W )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
trr +0.5A
(-)
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE
2.0
Single Phase Half Wave 60Hz Resistive or Inductive Load
(+) 25 Vdc (approx) (-)
D.U.T
0
PULSE
GENERATOR
-0.25A
(NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+)
1.0
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF. 2. Rise Time = 10ns max. Souce Impedance = 50 ohms.
1cm
SET TIME BASE FOR 10/20 ns/cm
0 0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A)
100
10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
5W
103
~H
FM
W
~H
04
01W
M1
HF
1.0
.1
TJ = 25
HF
M1
TJ = 100
.1
.01
Pulse Width = 300uS 1% Duty Cycle
.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT, (A)
.001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 70 60 50 40 30 20 10 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100
8.3ms Single Half Sine-Wave (JEDEC Method)
200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) 100
HFM 101 W~ HFM 105 W
TJ = 25
HF
HFM
M
TJ = 25
10
6W
106
~H
10
FM
FM
TJ = 150
1.0
W~
10 8W
W
10
HFM
108
W
RECTRON
Mounting Pad Layout
0.094 MAX. (2.38 MAX.)
0.071 MIN. (1.80 MIN.)
0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF
Dimensions in inches and (millimeters)
RECTRON

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